april 2010 renesas electronics ?2010. renesas electronics corporation, all rights reserved. power mosfet igbt (high-speed type) vdss id vgs vgs(off) rds(on) (v) (a) (v) typ(v) typ(m ? h7n1005ls 100 15 20 2.0 85 ldpak h7n1004ls 100 30 20 2.0 25 ldpak h5n2301pf 230 25 30 3.5 65 to-3pfm h5n2306pf 230 30 30 3.5 48 to-3pfm h5n2305pf 230 35 30 3.5 30 to-3pfm h5n2509p 250 30 30 3.5 53 to-3pfm h5n2503p 250 50 30 3.5 40 to-3p h5n3004p 300 25 30 3.5 75 to-3p h5n3007ls 300 25 30 2.8 120 ldpak h5n3003p 300 40 30 3.5 60 to-3p h5n3504p 350 20 30 3.5 100 to-3p p/n package electrical characteristics maximum rating p/n vces ic vge vce(sat) tf package (v) (a) (v) (v) typ ( s) gn4030v5ab 400 30 20 1.5 0.12 to-220ab gn6030v5ab 600 30 20 1.7 0.12 to-220ab rjp3053dpp 300 30 30 2.0 0.15 to-220fn RJP3063DPP 300 30 30 1.7 0.30 to-220fn rjp3054dpp 300 35 30 1.8 0.15 to-220fn rjp3064dpp 300 35 30 1.5 0.30 to-220fn rjp3055dpp 300 40 30 1.8 0.15 to-220fn rjp3065dpp 300 40 30 1.5 0.3 to-220fn rjp4065dpp 400 40 30 1.6 0.3 to-220fn rjp2557dpk 270 50 30 1.6 0.15 to-3p rjp3056dpk 300 45 30 1.6 0.15 to-3p rjp3057dpk 300 50 30 1.6 0.15 to-3p rjp3066dpk 300 45 30 1.4 0.3 to-3p rjp3067dpk 300 50 30 1.4 0.3 to-3p rjp4067dpk 400 50 30 1.7 0.35 to-3p maximum rating electrical charcteristics addressing ic tv/pc signal pdp signal processing timing control power supply sustain circuit sustain circuit x panel s c a n i c y power device pdp trends high intensity high breakdown voltage high efficiency low resistance high speed switching low cost wide mosfet line-ups high pressure gas igbt optimum fet high speed igbt power mosfets and igbt for pdp product lineup pdp system power mosfet igbt low on resistance low qg high avalanche tolerance low v ce (sat) high-speed switching merits
april 2010 renesas electronics ?2010. renesas electronics corporation, all rights reserved. full bridge vin vds( peak )=vin + v( surge ) pch nch hat3029r(30v) hat3031r(60v) nch&pch in 1pkg half bridge vin vds(peak)=vin + v( surge ) pch nch hat3029r(30v) hat3031r(60v) nch&pch in 1pkg hrv103a hrv103a push/pull vin vds( peak )=2vin + v( surge ) nch nch hat2215r(80v) dual nch in 1pkg vd ss vgs s id qg d qg v) v) a) max max (nc) nc) 1 hat2199r 30 20 11 17 25 13 16.5 1.8 7.5 2 hat2208r 30 20 9 24 35 18 23 1.1 4.4 3 hat2256r single 60 20 8 28 41 24 30 3.2 10 4 hat1131r -30 20 -9 21.5 31 15 19 5.8 17 5 hat1132r -30 20 -7 27.5 40 20 25 5.2 11.5 6 hat2276r 30 20 7.5 27 40 19 24 1.2 4.6 7 hat2280r 30 20 6 40 58 27 34 1.1 3 8 hat2275r 60 20 6.6 29 43 25 32 3.2 10 9 hat2215r 80 20 3.4 100 145 88 115 1.3 7.3 10 hat1126r pch+pch -60 20 6 60 85 40 50 8 37 30 20 6 40 58 27 34 1.1 3.1 -30 +10/-20 -6 36 53 25 32 4.4 11.5 45 20 5 55 75 44 55 0.9 3.0 -45 +10/-20 -3.8 95 130 75 95 1.5 4.9 60 20 6 32 45 25 32 8 18 -60 20 -5 90 130 60 76 8 18 60 20 6.6 29 43 25 32 2.8 10 -60 +10/-20 -3.4 120 175 95 120 2.2 6.0 60 20 5 55 80 48 60 1.4 - -60 20 -3.8 90 130 80 100 2.8 - 80 20 3.4 100 145 90 115 1.3 7.3 -80 20 -2.6 200 290 165 210 2.4 16 100 20 3.5 120 160 90 115 3.2 15 -100 20 -2.3 300 500 240 300 3.1 16 16 hat3021r 17 hat3019r no type no 13 hat3010r 11 nch+pch hat3029r hat3031r ma x.r a ti n g s vgs=1 0 v rds(on) (m ? ) vgs=4 .5 v(8 v) nch+nch 15 hat3038r 12 hat3037r 14 power mosfets for backlight inverter achieve miniaturization and higher efficiency product lineup example of application circuit (lcd tv, tft monitor, note pc) features merits low on resistance, high-speed switching low qg, low qgd small package, built-in 2 elements mniaturization high efficiency
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